The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for betavoltaic devices is presented. Analysis of the betavoltaic application shows an overall efficiency of 25% for tritiated amorphous silicon. A betavoltaic battery is a nuclear battery that converts energy from beta particles released by a beta emitting radioactive source, such as tritium, into electrical power. Common semiconductor designs of betavoltaic batteries use a semiconductor p-n junction device that is either directly exposed to beta decay or is illuminated by photons created when betas strike a phosphor. These common betavoltaic batteries suffer from technical problems in that the directly irradiated cells suffer material degradation of the p-n junction limiting the operating life to days while the photo conversion systems are indirect and limited by efficiency to less than 1%. A limitation of the aforementioned betavoltaic batteries is the self-absorption of beta energy in the radioactive source itself. In order to reduce the self-absorption of beta energy the radioactive isotope must be incorporated into the lat